DocumentCode :
959611
Title :
Sputtered molybdenum-silicon contact
Author :
Singh, Ashutosh
Volume :
68
Issue :
5
fYear :
1980
fDate :
5/1/1980 12:00:00 AM
Firstpage :
627
Lastpage :
628
Abstract :
The results of the study of sputtered molybdenum-silicon contact is reported. The contact resistance has been found to be in the range of 3-6 µΩ ċ cm2when the composite structure is annealed at 1050°C for 30 min in nitrogen ambient. Application of passivating layer of boron-doped glass over the molybdenum and subsequent annealing at the said temperature reduced this to 2-3 µΩ ċ cm2.
Keywords :
Band pass filters; Circuits; Frequency; Gyrators; Inductors; Network synthesis; Network topology; Notice of Violation; Polynomials; Transfer functions;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1980.11704
Filename :
1455973
Link To Document :
بازگشت