DocumentCode
959611
Title
Sputtered molybdenum-silicon contact
Author
Singh, Ashutosh
Volume
68
Issue
5
fYear
1980
fDate
5/1/1980 12:00:00 AM
Firstpage
627
Lastpage
628
Abstract
The results of the study of sputtered molybdenum-silicon contact is reported. The contact resistance has been found to be in the range of 3-6 µΩ ċ cm2when the composite structure is annealed at 1050°C for 30 min in nitrogen ambient. Application of passivating layer of boron-doped glass over the molybdenum and subsequent annealing at the said temperature reduced this to 2-3 µΩ ċ cm2.
Keywords
Band pass filters; Circuits; Frequency; Gyrators; Inductors; Network synthesis; Network topology; Notice of Violation; Polynomials; Transfer functions;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1980.11704
Filename
1455973
Link To Document