Title :
Forward transit delay in In0.53Ga0.47As heterojunction bipolar transistors with nonequilibrium electron transport
Author :
Laskar, Joy ; Nottenburg, Richard N. ; Baquedano, J.A. ; Levi, Anthony F J ; Kolodzey, James
Author_Institution :
Dept. of Electr. Eng., Hawaii Univ., Honolulu, HI, USA
fDate :
11/1/1993 12:00:00 AM
Abstract :
The authors measured the microwave performance of high speed InP/In0.53Ga0.47As heterojunction bipolar transistors in the temperature range 55 K⩽T⩽340 K. The extrinsic unity current gain cutoff frequency is 130 GHz at 340 K, increasing to 300 GHz at 55 K. The intrinsic emitter-collector forward delay decreases with decreasing temperature from 0.5 ps at 340 K to a saturated value of 0.28 ps for ⩽150 K. Such behavior may be explained only by the presence of nonequilibrium electron transport in the base and collector of the device
Keywords :
III-V semiconductors; S-parameters; delays; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 0.28 to 0.5 ps; 130 to 300 GHz; 55 to 340 K; InP-In0.53Ga0.47As; S-parameters; extrinsic unity current gain cutoff frequency; heterojunction bipolar transistors; high speed HBT; intrinsic emitter-collector forward delay; microwave performance; nonequilibrium electron transport; Current measurement; Delay; Frequency measurement; Gain measurement; Heterojunction bipolar transistors; Indium phosphide; Microwave measurements; Performance gain; Temperature distribution; Velocity measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
