Bottom-gate poly-Si thin film transistors using XeCl excimer laser annealing and ion doping techniques

Author

Furuta, Mamoru ; Kawamura, Tetsuya ; Yoshioka, Tatsuo ; Miyata, Yutaka

Author_Institution

Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

1964

Lastpage

1969

Abstract

High mobility bottom-gate poly-Si thin film transistors (TFTs) have been successfully fabricated on a hard glass substrate using XeCl excimer laser annealing and ion doping techniques. The authors used an a-Si:H film which is deposited by a plasma-enhanced chemical vapor deposition (PECVD) as a precursor film, and then they crystallized the a-Si film by XeCl excimer laser annealing. The maximum field effect mobility and grain size obtained were 200 cm²/V-s (n-channel), and 250 nm, respectively. The poly-Si TFTs showed excellent transfer characteristics, and an ON/OFF current ratio of over 10⁶ was obtained. Successful control of the threshold voltage within 4 V using an ion doping technique is also demonstrated

Keywords

carrier mobility; elemental semiconductors; grain size; ion implantation; laser beam annealing; semiconductor doping; silicon; thin film transistors; PECVD precursor film; Si; XeCl excimer laser annealing; bottom gate polysilicon TFT; grain size; hard glass substrate; ion doping; maximum field effect mobility; on/off current ratio; thin film transistors; threshold voltage control; transfer characteristics; Annealing; Chemical lasers; Chemical vapor deposition; Crystallization; Doping; Glass; Grain size; Plasma chemistry; Substrates; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239735

Filename

239735