• DocumentCode
    959693
  • Title

    Drift hole mobility in strained and unstrained doped Si1-x Gex alloys

  • Author

    Manku, Tanjinder ; McGregor, Joel M. ; Nathan, Arokia ; Roulston, David J. ; Noel, J.-P. ; Houghton, D.C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
  • Volume
    40
  • Issue
    11
  • fYear
    1993
  • fDate
    11/1/1993 12:00:00 AM
  • Firstpage
    1990
  • Lastpage
    1996
  • Abstract
    Results of the drift hole mobility in strained and unstrained SiGe alloys are reported for Ge fractions varying from 0 to 30% and doping levels of 1015-1019 cm-3. The mobilities are calculated taking into account acoustic, optical, alloy, and ionized-impurity scattering. The mobilities are then compared with experimental results for a boron doping concentration of 2×1019 cm-3. Good agreement between experimental and theoretical values is obtained. The results show an increase in the mobility relative to that of silicon
  • Keywords
    Ge-Si alloys; boron; carrier mobility; electron-phonon interactions; impurity scattering; semiconductor materials; Si1-xGex:B; acoustic scattering; alloy scattering; doping levels; drift hole mobility; ionized-impurity scattering; optical scattering; strained alloys; unstrained alloys; Acoustic scattering; Capacitive sensors; Doping; Electron mobility; Germanium alloys; Germanium silicon alloys; Optical distortion; Optical scattering; Silicon alloys; Silicon germanium;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.239739
  • Filename
    239739
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=959693