DocumentCode :
959706
Title :
From backward THz difference-frequency generation to parametric oscillation
Author :
Ding, Yujie J. ; Shi, Wei
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Volume :
12
Issue :
3
fYear :
2006
Firstpage :
352
Lastpage :
359
Abstract :
We have observed the backward difference-frequency generation (DFG) in two GaSe crystals in the terahertz (THz) region by mixing two infrared laser beams. For a 47-mm-long crystal, the output wavelength can be tuned in a wide range of 167.6-2060 μm (0.146-1.79 THz), whereas the peak output power can be as high as 217 W. The corresponding power conversion efficiency is determined to be about 0.03%. On the basis of these experimental results, our calculations show that peak output intensity can be scaled up to a level which is sufficiently high for exploring novel nonlinear effects in the THz region. Furthermore, we have discussed the possibility of including a cavity for one of the mixing beams to enhance the conversion efficiencies for the backward DFG. After taking into consideration all the important issues, we have shown that the backward parametric oscillation is feasible in the THz region by using a few crystals under the optimum pumping conditions.
Keywords :
III-V semiconductors; gallium compounds; laser beams; microwave photonics; multiwave mixing; optical frequency conversion; optical materials; optical parametric oscillators; optical pumping; submillimetre wave generation; submillimetre wave spectra; 0.146 to 1.79 THz; 167.6 to 2060 mum; 217 W; 47 mm; GaSe; GaSe crystals; backward THz generation; backward parametric oscillation; difference-frequency generation; infrared laser beam mixing; nonlinear effects; optimum pumping; Birefringence; Crystals; Frequency; Gas lasers; Gases; Laser beams; Laser tuning; Nonlinear optics; Power conversion; Power generation; Backward difference-frequency generation; GaSe; ZnGeP; backward parametric oscillation; terahertz (THz);
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2006.871953
Filename :
1638431
Link To Document :
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