Estimation of insulation layer conductance in MNOS structure

Author

Takahashi, Yoshihiro ; Ohnishi, Kazunori

Author_Institution

Dept. of Electron., Nihon Univ., Chiba, Japan

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2006

Lastpage

2010

Abstract

A method for estimating the conductance of each insulation layer of MNOS devices is described. In this method, the conductance values can be independently estimated using the frequency dependence of the capacitance and conductance versus gate voltage characteristics. The frequency dependence in the accumulation region can be explained by an equivalent circuit which considers the substrate resistance and the conductance of each insulation layer. It was found that the conduction processes in nitride and oxide layers are dominated by Frenkel-Poole emission and direct tunnelling emission, respectively, and that the degradation of retention characteristics of MNOS memory devices with erase/write cycles is caused by increased nitride conductance

Keywords

EPROM; Poole-Frenkel effect; electric admittance measurement; equivalent circuits; metal-insulator-semiconductor devices; tunnelling; EEPROM; Frenkel-Poole emission; MNOS memory devices; MNOS structure; Si₃N₄-SiO₂-Si; accumulation region; capacitance gate voltage characteristics; conductance versus gate voltage characteristics; direct tunnelling emission; equivalent circuit; erase/write cycles; frequency dependence; insulation layer conductance measurement; retention characteristics degradation; substrate resistance; Capacitance; Capacitance-voltage characteristics; Degradation; Electrical resistance measurement; Equivalent circuits; Frequency dependence; Frequency estimation; Insulation; Tunneling; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239741

Filename

239741