A floating-gate analog memory device for neural networks

Author

Fujita, Osamu ; Amemiya, Yoshihito

Author_Institution

NTT LSI Labs., Kanagawa, Japan

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2029

Lastpage

2035

Abstract

A floating-gate MOSFET device that can be used as a precision analog memory for neural network LSIs is described. This device has two floating gates. One is a charge-injection gate with a Fowler-Nordheim tunnel junction, and the other is a charge-storage gate that operates as a MOSFET floating gate. The gates are connected by high resistance, and the charge-injection gate is small so that its capacitance is much less than that of the charge-storage gate. By applying control pulses to the charge-injection gate, it is possible to charge and discharge the MOSFET floating gate in order to modify the MOSFET current with high resolution over 10 b. The charge injection can be carried out without disturbing the MOSFET output current with high voltage control pulses. This device is useful for on-chip learning in analog neural network LSIs

Keywords

CMOS integrated circuits; analogue storage; insulated gate field effect transistors; large scale integration; learning (artificial intelligence); neural chips; Fowler-Nordheim tunnel junction; N-well CMOS floating gate process; charge-injection gate; charge-storage gate; floating-gate MOSFET; floating-gate analog memory device; high resolution MOSFET current modification; high voltage control; neural network LSIs; on-chip learning; Analog memory; Capacitance; FETs; Large scale integration; MOSFET circuits; Network-on-a-chip; Neural networks; Nonvolatile memory; Tunneling; Voltage control;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239745

Filename

239745