Title :
An intelligent power IC with double buried-oxide layers formed by SIMOX technology
Author :
Ohno, Terukazu ; Matsumoto, Satoshi ; Izumi, Katsutoshi
Author_Institution :
NTT LSI Labs., Atsugi, Japan
fDate :
11/1/1993 12:00:00 AM
Abstract :
A device structure for an intelligent power LSI composed of a vertical power MOSFET and a control CMOS LSI on a single chip is discussed. The distinctive feature of the device structure is that double buried-oxide layers formed by SIMOX technology are utilized to electrically protect the CMOS LSI from the high voltage applied to the power MOSFET. An evaluation of the electrical characteristics of an intelligent power IC and its components fabricated on a trial basis for automotive applications verifies the usefulness of the device structure
Keywords :
CMOS integrated circuits; SIMOX; automotive electronics; insulated gate field effect transistors; integrated circuit technology; power integrated circuits; SIMOX technology; automotive applications; control CMOS LSI; double buried-oxide layers; electrical characteristics; high voltage protection; intelligent power IC; power LSI; vertical power MOSFET; CMOS technology; Electric variables; Intelligent structures; Intelligent vehicles; Large scale integration; MOSFET circuits; Power MOSFET; Power integrated circuits; Protection; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
