An intelligent power IC with double buried-oxide layers formed by SIMOX technology

Author

Ohno, Terukazu ; Matsumoto, Satoshi ; Izumi, Katsutoshi

Author_Institution

NTT LSI Labs., Atsugi, Japan

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2074

Lastpage

2080

Abstract

A device structure for an intelligent power LSI composed of a vertical power MOSFET and a control CMOS LSI on a single chip is discussed. The distinctive feature of the device structure is that double buried-oxide layers formed by SIMOX technology are utilized to electrically protect the CMOS LSI from the high voltage applied to the power MOSFET. An evaluation of the electrical characteristics of an intelligent power IC and its components fabricated on a trial basis for automotive applications verifies the usefulness of the device structure

Keywords

CMOS integrated circuits; SIMOX; automotive electronics; insulated gate field effect transistors; integrated circuit technology; power integrated circuits; SIMOX technology; automotive applications; control CMOS LSI; double buried-oxide layers; electrical characteristics; high voltage protection; intelligent power IC; power LSI; vertical power MOSFET; CMOS technology; Electric variables; Intelligent structures; Intelligent vehicles; Large scale integration; MOSFET circuits; Power MOSFET; Power integrated circuits; Protection; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239751

Filename

239751