Title :
Improved junction capacitance model for the GaAs MESFET
Author :
Rodriguez-Tellez, J. ; Mezher, K. ; Al-Daas, M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Bradford Univ., UK
fDate :
11/1/1993 12:00:00 AM
Abstract :
An empirical equation for simulating the bias dependency of the junction capacitances of the GaAs MESFET is presented and compared with existing techniques. It provides increased accuracy over a wide range of silicon and GaAs devices for microwave circuit design applications and up to 72% savings in CPU execution speed over existing techniques
Keywords :
III-V semiconductors; Schottky gate field effect transistors; capacitance; gallium arsenide; semiconductor device models; solid-state microwave devices; CPU execution speed; GaAs; GaAs MESFET; bias dependency; junction capacitance model; microwave circuit design applications; Capacitance; Central Processing Unit; Circuit simulation; Equations; Gallium arsenide; MESFETs; Microwave devices; Parameter estimation; Silicon; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
