Title :
Note on charge conservation in the transient semiconductor equations
Author :
Pfirsch, F. ; Ruff, M.
Author_Institution :
Siemens AG Corporate Res. & Dev., Munich, Germany
fDate :
11/1/1993 12:00:00 AM
Abstract :
A modification of the continuity equations for electrons and holes in materials with deep donors or acceptors is presented. The modification is necessary in order to prevent violation of charge conservation in transient simulations. The influence of incomplete ionization of dopants on the transient characteristics of a SiC power diode is demonstrated
Keywords :
deep levels; power electronics; semiconductor device models; semiconductor diodes; semiconductor materials; silicon compounds; transient response; SiC power diode; charge conservation; continuity equations; deep acceptors; deep donors; incomplete dopant ionization; p-n--n+ diode; transient semiconductor equations; transient simulations; turn-off simulation; Capacitance; Charge carrier processes; Circuit simulation; Electron devices; Gallium arsenide; MESFET circuits; Microwave devices; Poisson equations; Silicon carbide; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
