Self-aligned BJTs for VLSI using a new diffusion technique for shallow base formation

Author

Johnson, F.S. ; Wortman, J.J. ; Ozturk, M.C.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2099

Lastpage

2100

Abstract

Summary form only given. A method of using selectively deposited and selectively removed `polycrystalline´ Si_xGe_1-x as a diffusion source for the fabrication of narrow-base self-aligned BJTs (bipolar junction transistors) is described. The transistors showed excellent quality emitter-base and base-collector junction characteristics. In addition, this process was found to be completely compatible with current double polysilicon self aligned technology

Keywords

Ge-Si alloys; bipolar transistors; chemical vapour deposition; diffusion in solids; etching; rapid thermal processing; semiconductor doping; semiconductor materials; RTCVD; Si_xGe_1-x; VLSI; base-collector junction characteristics; bipolar junction transistors; diffusion technique; double polysilicon self aligned technology; emitter base junction characteristics; narrow-base self-aligned BJTs; selective deposition; selective removal; shallow base formation; Anisotropic magnetoresistance; Boron; Doping; Dry etching; Electron devices; Fabrication; Germanium silicon alloys; Silicon compounds; Silicon germanium; Very large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239761

Filename

239761