Title :
Self-aligned BJTs for VLSI using a new diffusion technique for shallow base formation
Author :
Johnson, F.S. ; Wortman, J.J. ; Ozturk, M.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC
fDate :
11/1/1993 12:00:00 AM
Abstract :
Summary form only given. A method of using selectively deposited and selectively removed `polycrystalline´ SixGe1-x as a diffusion source for the fabrication of narrow-base self-aligned BJTs (bipolar junction transistors) is described. The transistors showed excellent quality emitter-base and base-collector junction characteristics. In addition, this process was found to be completely compatible with current double polysilicon self aligned technology
Keywords :
Ge-Si alloys; bipolar transistors; chemical vapour deposition; diffusion in solids; etching; rapid thermal processing; semiconductor doping; semiconductor materials; RTCVD; SixGe1-x; VLSI; base-collector junction characteristics; bipolar junction transistors; diffusion technique; double polysilicon self aligned technology; emitter base junction characteristics; narrow-base self-aligned BJTs; selective deposition; selective removal; shallow base formation; Anisotropic magnetoresistance; Boron; Doping; Dry etching; Electron devices; Fabrication; Germanium silicon alloys; Silicon compounds; Silicon germanium; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
