DocumentCode
959937
Title
113-GHz f T graded-base SiGe HBT´s
Author
Crabbe, Edward ; Meyerson, B. ; Harame, D. ; Megdanis, A. ; Cotte, J. ; Chu, James ; Gilbert, Markus ; Stanis, C. ; Comfort, J. ; Patton, G. ; Subbanna, S.
Author_Institution
IBM T.J. Watson Res. Center, Yorktown Heights, NY
Volume
40
Issue
11
fYear
1993
fDate
11/1/1993 12:00:00 AM
Firstpage
2100
Lastpage
2101
Abstract
Summary form only given. A novel low-thermal cycle process was used to fabricate epitaxial SiGe-base heterojunction bipolar transistors (HBTs) with record unity current gain cutoff frequencies. The process includes an in situ phosphorus-doped polysilicon emitter which requires only a 800°C-10-s anneal. A peak f T of 113 GHz at V CB of 1 V was obtained for an intrinsic base sheet resistance of 7 kΩ/□
Keywords
Ge-Si alloys; S-parameters; heterojunction bipolar transistors; semiconductor materials; semiconductor technology; solid-state microwave devices; 113 GHz; I-V characteristics; S-parameters; Si:P; SiGe; SiGe-base heterojunction bipolar transistors; anneal; graded base HBT; intrinsic base sheet resistance; low-thermal cycle process; polysilicon emitter; unity current gain cutoff frequencies; Annealing; Bridges; Cutoff frequency; Doping; Electron devices; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Semiconductor films; Silicon germanium;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.239764
Filename
239764
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