Title :
A new recessed gate MOSFET structure with the graded source/drain
Author :
Lee, Wen-Hsian ; Park, Young-Jin ; Lee, Jonah D.
Author_Institution :
Dept. of Electron. Eng., Seoul Nat. Univ.
fDate :
11/1/1993 12:00:00 AM
Abstract :
Summary form only given. A gate recessed MOS (GR-MOS) structure with the selectively halo-doped channel by boron implantation carried out after graded (source/drain) (S/D) formation is proposed. The S/D is formed without n+ counter-doping to the channel doping. Initial characterization results of GR-MOSFETs having a 0.25 μm channel length are presented in comparison with the conventional lightly doped drain (LDD)-MOSFETs. It was verified that the new concept gives improved device characteristics over the LDD structure for a wide range of bias conditions and channel lengths, and renders the device design window wider in deep submicron devices
Keywords :
insulated gate field effect transistors; ion implantation; 0.25 micron; Si:B-SiO2; bias conditions; channel length; deep submicron devices; device design window; gate recessed MOS structure; graded source/drain; recessed gate MOSFET structure; selectively halo-doped channel; Charge carrier processes; Doping; Electrical resistance measurement; Electron devices; Hot carriers; MOSFET circuits; Monte Carlo methods; Quantization; Thickness control; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
