DocumentCode :
959995
Title :
The self-consistent simulation of the modulation responses of quantum well lasers
Author :
Grupen, Matt ; Hess, K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Illinois Univ., Urbana, IL
Volume :
40
Issue :
11
fYear :
1993
fDate :
11/1/1993 12:00:00 AM
Firstpage :
2105
Lastpage :
2106
Abstract :
Summary form only given. A self-consistent simulation (called MINILASE) that solves simultaneously the electrostatic, carrier transport, and optical problems in all areas of the device has been developed and used to calculate self-consistent modulation responses for a laser diode. The frequency responses of three single buried quantum well GaAs/AlGaAs lasers, each with a different type of cladding region, have been compared. One cladding region has constant Al concentration; another has a quadratically graded Al mole fraction; and the third is linearly graded. The calculations clearly show that the modulation response can be improved by exploiting the gradient in crystal potential that accompanies a graded cladding region
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser theory; optical modulation; semiconductor device models; semiconductor lasers; GaAs-AlGaAs; MINILASE; carrier transport; cladding region; crystal potential gradient; electrostatic problems; frequency responses; graded cladding region; laser diode; modulation responses; optical problems; quantum well lasers; self-consistent simulation; single buried quantum well GaAs/AlGaAs lasers; Damping; Equations; Gallium arsenide; Laser excitation; Laser modes; Laser theory; Pump lasers; Quantum computing; Quantum well devices; Quantum well lasers;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.239771
Filename :
239771
Link To Document :
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