DocumentCode :
960013
Title :
A New Property of Etched Niobium Wet Electrolytic Capacitors
Author :
Burnham, John
Author_Institution :
Ti-Tal,Inc., CA
Volume :
3
Issue :
1
fYear :
1967
fDate :
3/1/1967 12:00:00 AM
Firstpage :
21
Lastpage :
25
Abstract :
An etched niobium capacitor has been made which shows about a ten to one change in capacitance from zero bias to the rated voltage. The approximate relation between the capacitance and the bias has been found to obey the following equation C= Co (V + gb)~J2´ If we assume the eontaet potential Vbto be 0.80 volts, and (C/Co)2is plotted versus 1/V + Vb, we obtain a straight line, thus showing that we are dealing with a p-n junction either at the oxide-solution interface or at an interfaee within the oxide layer. The large bias-effect suggests the possibility of the use of such a eomponent in eontrol circuits at low frequencies in a manner similar to a varaetor diode at high frequencies. Additional Key Words (for Information Retrieval)--niobium, electrolytic capacitor, variable capacitor, solid-state variable capacitor.
Keywords :
Electrolytic capacitors; Niobium; Solid-state variable capacitor; Variable capacitor; Capacitance; Capacitors; Circuits; Diodes; Equations; Frequency; Niobium; P-n junctions; Voltage; Wet etching;
fLanguage :
English
Journal_Title :
Parts, Materials and Packaging, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9502
Type :
jour
DOI :
10.1109/TPMP.1967.1135712
Filename :
1135712
Link To Document :
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