Title :
Curved and tapered waveguide mode-locked InGaAs/AlGaAs semiconductor lasers fabricated by impurity induced disordering
Author :
Helkey, Roger ; Zou, Wei-xia ; Mar, Alan ; Young, D.B.
Author_Institution :
California Univ., Santa Barbara, CA
fDate :
11/1/1993 12:00:00 AM
Abstract :
Summary form only given. Modelocking using curved waveguide devices for low facet reflectivity and using tapered waveguide devices for high output power has been demonstrated. Strong suppression of reflection-seeded secondary pulses was observed for curved waveguides, and increased output power for tapered waveguides. InGaAs/AlGaAs quantum-well semiconductor diode lasers were fabricated using impurity induced disordering. The waveguide has a linear taper from 2.5 μm to 7.5 μm width over a 150 μm distance. The modelocked output pulse energy was increased to 4.1 pJ, compared to 1.8 pJ for a similar 2.5 μm waveguide untapered device
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser mode locking; optical waveguides; optical workshop techniques; semiconductor lasers; 2.5 to 7.5 micron; 4.1 pJ; InGaAs-AlGaAs; curved waveguide devices; high output power; impurity induced disordering; linear taper; low facet reflectivity; mode locking; modelocked output pulse energy; quantum-well semiconductor diode lasers; reflection seeded secondary pulse suppression; semiconductor lasers; tapered waveguide devices; Indium gallium arsenide; Laser modes; Power generation; Quantum well lasers; Reflectivity; Semiconductor diodes; Semiconductor impurities; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers;
Journal_Title :
Electron Devices, IEEE Transactions on
