OMCVD grown AlInAs/GaInAs HEMTs with AlGaInP Schottky layer

Author

Hong, Woo-Pyo ; Caneau, Catherine ; Song, Jong-In ; Hayes, J.R.

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2111

Abstract

A novel AlInAs/GaInAs HEMT (high electron mobility transistor) with an AlGaInP Schottky layer is reported. In addition to excellent AC performance, the gate leakage and breakdown characteristics have been significantly improved. The AlInAs/GaInAs HEMT structures were grown by low-pressure OMCVD (organometallic chemical vapor deposition). The results obtained indicate that AlGaInP is an excellent candidate as a Schottky layer for InP-base HEMTs

Keywords

III-V semiconductors; Schottky effect; aluminium compounds; electric breakdown of solids; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; leakage currents; semiconductor growth; vapour phase epitaxial growth; AC performance; AlGaInP Schottky layer; AlInAs-GaInAs-AlGaInP; HEMTs; OMCVD grown; breakdown characteristics; gate leakage; high electron mobility transistor; low-pressure CVD; organometallic chemical vapor deposition; Electron devices; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; Microwave amplifiers; Microwave devices; Power transistors; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239780

Filename

239780