Title :
Piezoelectric Al0.3Ga0.7As longitudinal mode bar resonators
Author :
Li, Lihua ; Kumar, Parshant ; Calhoun, Lynn ; DeVoe, Don L.
Author_Institution :
Dept. of Mech. Eng., Univ. of Maryland, College Park, MD, USA
fDate :
6/1/2006 12:00:00 AM
Abstract :
This paper reports the modeling, fabrication, and experimental characterization of piezoelectric longitudinal mode bar resonators based on thin film single crystal Al0.3Ga0.7 As. Fabricated resonators with lengths ranging from 1000 μm to 100 μm have been characterized for operation in their first five odd longitudinal modes. Resonance frequencies range from 2.5 to 75 MHz, with quality factors up to 25 390 at 21.8 MHz in vacuum. Power handling capacity as high as -2.6 dBm is demonstrated at 18.8 MHz. Motional resistance and temperature stability of the resonators are also evaluated.
Keywords :
III-V semiconductors; aluminium alloys; crystal resonators; gallium arsenide; thermal stability; thin films; 100 to 1000 micron; 2.5 to 75 MHz; AlGaAs; motional resistance; piezoelectric longitudinal mode bar resonators; power handling capacity; temperature stability; thin film single crystal; Circuits; Film bulk acoustic resonators; Piezoelectric films; Q factor; Radio frequency; Radiofrequency microelectromechanical systems; Resonance; Resonant frequency; Resonator filters; Temperature; Piezoelectric; radio frequency microelectromechanical systems (RF MEMS); resonator;
Journal_Title :
Microelectromechanical Systems, Journal of
DOI :
10.1109/JMEMS.2006.876654
