Title :
Study of the dependence of Ga0.47In0.53As/Al x In1-xAs power HEMT breakdown voltage on Schottky layer design and device layout
Author :
Brown, J.J. ; Brown, A.S. ; Rosenbaum, S.E. ; Matloubian, M. ; Larson, Lawrence E. ; Melendes, M.A. ; Thompson, M.A.
Author_Institution :
Hughes Res. Labs., Malibu, CA
fDate :
11/1/1993 12:00:00 AM
Abstract :
Summary form only given. A systematic study of the improvement of Ga0.47In0.53As/Alx In1-xAs HEMT (high electron mobility transistor) breakdown voltage by varying the Schottky layer design and device geometry is presented. The HEMT structure investigated is a modulation-doped Ga0.47In0.53As/Alx In1-xAs on InP device with a sheet of charge placed at the center of the 300 Å wide channel. The device with a gate length of 0.5 μm, a source-drain spacing of 5μm, and an Al0.7In0.3As Schottky layer exhibited the best breakdown characteristics of |BVgd|=6.8 V and BVds=7.8 V. The typical transistor had a maximum transconductance of 500 mS/mm, a full channel current of 700 mA/mm for a gate bias of 0.4 V, and a current gain cutoff frequency of over 80 GHz. The power performance was measured on 500-μm-wide devices at 4 GHz and Vds=4.5 V. Under Class AB operating conditions, the output power density, power-added efficiency, and power gain were 0.45 W/mm, 59%, and 14.25 dB, respectively
Keywords :
III-V semiconductors; Schottky effect; aluminium compounds; electric breakdown of solids; gallium arsenide; high electron mobility transistors; indium compounds; power transistors; solid-state microwave devices; 0.5 micron; 14.25 dB; 4 GHz; 500 mS/mm; 59 percent; 6.8 V; 7.8 V; 700 mA; 80 GHz; Al0.7In0.3As Schottky layer; Class AB operating conditions; Ga0.47In0.53As-AlxIn1-x As-InP; InP substrate; MODFET; SHF; Schottky layer design; breakdown characteristics; breakdown voltage; device layout; high electron mobility transistor; modulation-doped; power HEMT; Cutoff frequency; Density measurement; Electric breakdown; Epitaxial layers; Geometry; HEMTs; Indium phosphide; MODFETs; Power measurement; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
