GaInAs/InP composite channel HEMT´s

Author

Matloubian, M. ; Jelloian, L.M. ; Lui, Max ; Liu, Tiegen ; Larson, Lawrence E. ; Nguyen, L.D. ; Le, M.V.

Author_Institution

Hughes Res. Labs., Malibu, CA

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2112

Abstract

Summary form only given. Al_0.6In_0.4As Schottky layers have been combined with GaInAs/InP composite channels. The effect of changing the thickness of the Ga_0.47In_0.53As channel on the DC and RF characteristics of the HEMTs was investigated. Preliminary results indicate that GaInAsP/InP composite channel HEMTs with a Ga_0.47In_0.53As channel thickness of 50 Å or less show improvement in the drain-to-source breakdown voltage without sacrificing performance

Keywords

III-V semiconductors; Schottky effect; electric breakdown of solids; gallium arsenide; high electron mobility transistors; indium compounds; 50 Å; Al_0.6In_0.4As Schottky layers; Al_0.6In_0.4As-Ga_0.47In_0.53As-InP; DC characteristics; Ga_0.47In_0.53As channel thickness; GaInAs/InP composite channel; HEMTs; RF characteristics; channel thickness variation; drain-to-source breakdown voltage; Breakdown voltage; Electron devices; Gallium arsenide; HEMTs; Indium phosphide; Knee; Laboratories; MODFETs; Microwave devices; Thermal conductivity;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239782

Filename

239782