Title :
GaInAs/InP composite channel HEMT´s
Author :
Matloubian, M. ; Jelloian, L.M. ; Lui, Max ; Liu, Tiegen ; Larson, Lawrence E. ; Nguyen, L.D. ; Le, M.V.
Author_Institution :
Hughes Res. Labs., Malibu, CA
fDate :
11/1/1993 12:00:00 AM
Abstract :
Summary form only given. Al0.6In0.4As Schottky layers have been combined with GaInAs/InP composite channels. The effect of changing the thickness of the Ga0.47In0.53 As channel on the DC and RF characteristics of the HEMTs was investigated. Preliminary results indicate that GaInAsP/InP composite channel HEMTs with a Ga0.47In0.53As channel thickness of 50 Å or less show improvement in the drain-to-source breakdown voltage without sacrificing performance
Keywords :
III-V semiconductors; Schottky effect; electric breakdown of solids; gallium arsenide; high electron mobility transistors; indium compounds; 50 Å; Al0.6In0.4As Schottky layers; Al0.6In0.4As-Ga0.47In0.53 As-InP; DC characteristics; Ga0.47In0.53As channel thickness; GaInAs/InP composite channel; HEMTs; RF characteristics; channel thickness variation; drain-to-source breakdown voltage; Breakdown voltage; Electron devices; Gallium arsenide; HEMTs; Indium phosphide; Knee; Laboratories; MODFETs; Microwave devices; Thermal conductivity;
Journal_Title :
Electron Devices, IEEE Transactions on
