Title :
AlGaAs/GaAs Pnp HBT with 54 GHz fmax and application to high-performance complementary technology
Author :
Kim, T.S. ; Tserng, Hua-Quen
fDate :
11/1/1993 12:00:00 AM
Abstract :
Summary form only given. A self-aligned AlGaAs/GaAs Pnp HBT (heterojunction bipolar transistor) with a maximum frequency of oscillation of 54 GHz is reported. Improvements in device speed over previous work were obtained by optimization of epitaxial structure and reduction of base contact resistance. The PnP epitaxial structure was grown by nonarsine MOVPE (metal-organic vapor-phase epitaxy), with silicon and carbon as the donor and acceptor dopants. The Pnp HBT epitaxial structure was incorporated into recessed areas in wafers with a previously grown Npn HBT epi structure, and the two device types were fabricated simultaneously. Pnp and Npn devices on a single wafer achieved fmax of 50 and 90 GHz, respectively
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; solid-state microwave devices; vapour phase epitaxial growth; 54 GHz; 90 GHz; AlGaAs-GaAs; HBT; Pnp device; base contact resistance; epitaxial structure; heterojunction bipolar transistor; high-performance complementary technology; metal-organic vapor-phase epitaxy; nonarsine MOVPE; p-n-p device; recessed areas; self-aligned; Bridges; Contact resistance; Electronic ballasts; Gallium arsenide; Heterojunction bipolar transistors; Lenses; Resistors; Thermal force; Thermal lensing; Thermal resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
