Title :
Short optical pulse generated by integrated MQW DBR laser/EA-modulator fabricated by selective-area MOVPE
Author :
Chen, Y.K. ; Tanbun-Ek, T. ; Logan, R.A. ; Tate, A. ; Sergent, A.M. ; Wecht, K.W. ; Sciortino, P.F.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ
fDate :
11/1/1993 12:00:00 AM
Abstract :
Summary form only given. The authors report on the generation of short optical pulses by utilizing the nonlinear absorption characteristics of a multiple quantum well (MQW) electroabsorption (EA) modulator, which is monolithically integrated with an MQW wavelength-tunable distributed Bragg reflector (DBR) laser on a single chip. Preliminary measurements show that optical pulses as short as 39 ps have been generated at a repetition rate of 3 GHz with a broad tuning range of 5.4 nm near 1554-nm lasing wavelength. The bandgap energies of both the narrow-gap active MQW region and the wide-gap passive MQW region are controlled by the oxide width and grown at the same time using selective-area epitaxy by metal-organic vapor-phase epitaxy (MOVPE)
Keywords :
distributed Bragg reflector lasers; electro-optical devices; electroabsorption; integrated optics; laser tuning; nonlinear optics; optical modulation; semiconductor lasers; vapour phase epitaxial growth; 1554 nm; 3 GHz; 39 ps; MQW DBR laser; distributed Bragg reflector; electroabsorption modulator; integrated laser/modulator; metal-organic vapor-phase epitaxy; multiple quantum well; narrow-gap active MQW region; nonlinear absorption characteristics; oxide width; selective-area MOVPE; short optical pulses; wavelength-tunable; wide-gap passive MQW region; Absorption; Character generation; Distributed Bragg reflectors; Epitaxial growth; Laser tuning; Optical pulse generation; Optical pulses; Pulse modulation; Quantum well devices; Quantum well lasers;
Journal_Title :
Electron Devices, IEEE Transactions on
