High-speed, high breakdown voltage InP/InGaAs double-heterojunction bipolar transistors grown by MOMBE

Author

Beam, E.A.

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2121

Abstract

Summary form only given. The authors report very-high-performance InP/InGaAs double-heterojunction bipolar transistors (DHBTs) with low output conductance and high breakdown voltage of at least 5.5 V at high current densities, with measured BV_CEO and BV_CBO of >7.5 V and 10.6 V, respectively. The 11 μm² devices exhibited f_T of 134 GHz and f_max of 113 GHz at V_CE=1.57 V and I_C=16.22 mA. The epitaxial structure was grown by metal-organic molecular beam epitaxy (MOMBE) using tertiarybutylarsine and tertiarybutylphosphine as the group-V sources

Keywords

III-V semiconductors; chemical beam epitaxial growth; electric breakdown of solids; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor growth; solid-state microwave devices; 113 GHz; 134 GHz; 16.22 mA; 5.5 V; DHBTs; HBT; InP-InGaAs; MOMBE; double-heterojunction bipolar transistors; epitaxial structure; group-V sources; high breakdown voltage; high speed operation; low output conductance; metal-organic molecular beam epitaxy; tertiarybutylarsine; tertiarybutylphosphine; Bipolar transistors; Breakdown voltage; Current measurement; Cutoff frequency; Doping profiles; Electrons; Indium gallium arsenide; Indium phosphide; Message-oriented middleware; Molecular beam epitaxial growth;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239796

Filename

239796