Title :
AlGaAs/GaAs HBTs with reduced base-collector capacitance by using buried SiO2 and polycrystalline GaAs in the extrinsic base and collector
Author :
Mochizuki, K. ; Nakamura, T. ; Tanoue, Takuya ; Masuda, Hiroji ; Horiuchi, Masaru
Author_Institution :
Hitachi Ltd., Tokyo
fDate :
11/1/1993 12:00:00 AM
Abstract :
Summary form only given. A novel AlGaAs/GaAs HBT (heterojunction bipolar transistor) structure with buried SiO2 and polycrystalline GaAs (poly-GaAs) in the extrinsic base and collector is presented. The lower dielectric constant of SiO2 and complete carrier depletion of n-type poly-GaAs have reduced the extrinsic component of CBC (base-collector capacitance) to 30% while fT has been kept high by a thin intrinsic collector. By using newly developed low-resistance p-type poly-GaAs for the base electrode, further reduction in CBC is expected with a one-dimensional transistor structure, such as SICOS
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor technology; AlGaAs/GaAs; HBT; SICOS; base electrode; base-collector capacitance; buried SiO2; carrier depletion; dielectric constant; extrinsic component; one-dimensional transistor; Capacitance; Circuits; Conductivity; Crystallization; Electrodes; Electron devices; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Random access memory;
Journal_Title :
Electron Devices, IEEE Transactions on
