• DocumentCode
    960345
  • Title

    Q band GaAs f.e.t. amplifier and oscillator

  • Author

    Baechtold, W.

  • Author_Institution
    IBM Research Division, Rÿschlikon, Switzerland
  • Volume
    7
  • Issue
    10
  • fYear
    1971
  • Firstpage
    275
  • Lastpage
    276
  • Abstract
    GaAs field-effect transistors with a Schottky-barrier gate have been investigated in the frequency range 12¿20 GHz. Measurements of the maximum available gain have shown that the devices have much higher gain in this range than has been expected. A 17 GHz oscillator having an output power of 4mW and a 4-stage 14.9GHz amplifier with 16 dB of power gain have been built using stripline technique.
  • Keywords
    field effect transistors; microwave amplifiers; microwave oscillators; 12 to 20 GHz; FET; GaAs; Q-band; microwave amplifiers; microwave oscillators; stripline technique;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710188
  • Filename
    4244527
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=960345