DocumentCode :
960350
Title :
Characterization of three commercially available Hall effect sensors for low temperatures and magnetic fields to 23 T
Author :
Sample, H.H. ; Rubin, L.G.
Author_Institution :
Tufts University, Medford, Massachusetts
Volume :
12
Issue :
6
fYear :
1976
fDate :
11/1/1976 12:00:00 AM
Firstpage :
810
Lastpage :
812
Abstract :
Low temperature measurements were made on commercially supplied InAs, InSb, and GaAs Hall probes in magnetic fields as high as 23 T. For fields above ∼6 T, the quantum oscillations observed for the GaAs probes were comparable in magnitude to those exhibited by the other two types, i.e., l\\sim2 %. At lower fields, the sensitivities of both the GaAs and InSb sensors were different from their respective high field values; this behavior was absent in the case of the InAs probes. All three types of probes shared the advantage of reasonably good reproducibility with respect to thermal cycling and magnetic field cycling.
Keywords :
Cryogenic materials/devices; Gallium materials/devices; Hall effect; Indium materials/devices; Magnetic transducers; Gallium arsenide; Hall effect; Hall effect devices; Magnetic field measurement; Magnetic fields; Magnetic sensors; Probes; Reproducibility of results; Temperature sensors; Voltage;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1976.1059250
Filename :
1059250
Link To Document :
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