Title :
MOS characterization of thermally oxided 6H silicon carbide
Author :
Sanders, J.W. ; Pan, Jeng-Shyang ; Xie, Meihua ; Sheppard, S.T. ; Mathur, Manisha ; Melloch, M.R.
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN
fDate :
11/1/1993 12:00:00 AM
Abstract :
Summary form only given. An MOS evaluation of the SIO2/SiC interface as a function of oxidation conditions and substrate doping is reported. 6H SiC (Si face) epitaxial wafers were thermally oxidized in both wet and dry ambients. MOS capacitors were formed by thermally evaporating circular aluminium field plates. Capacitance transient (C-t) measurements have been performed at elevated temperatures (260-370°C). Approximate values for intrinsic carrier concentration ni as a function of temperature in the range 270-360°C have been obtained directly from the measured C-V curve. These ni values are more than two orders of magnitude larger than would be calculated by extrapolating the accepted room temperature value. Based on these ni values, bulk generation lifetime τ G and surface generation velocity S0 are calculated for an n-type sample using a modified Zerbst technique. Both τG and S0 are within about a factor of 20 of the best reported silicon values
Keywords :
carrier lifetime; metal-insulator-semiconductor devices; oxidation; semiconductor materials; semiconductor-insulator boundaries; silicon compounds; 260 to 370 degC; C-V curve; MOS capacitors; MOS evaluation; SIO2/SiC interface; SiO2-SiC; bulk generation lifetime; capacitance transient; dry ambients; modified Zerbst technique; oxidation conditions; substrate doping; surface generation velocity; wet ambients; Capacitance; Capacitance-voltage characteristics; Conductivity; Doping; Fabrication; Passivation; Schottky diodes; Silicon carbide; Temperature; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
