Bound-to-continuum GaInAs-AlAsSb quantum cascade lasers with reduced electric injection power density

Author

Yang, Q. ; Manz, C. ; Bronner, W. ; Schauble, K. ; Mann, Ch. ; Schwarz, K. ; Kohler, K. ; Wagner, J.

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys., Freiburg

Volume

18

Issue

12

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

1356

Lastpage

1358

Abstract

Short-wavelength (lambda<4 mum) GaInAs-AlAsSb quantum cascade (QC) lasers have been demonstrated using a "bound-to-continuum" design for the purpose of reducing the electric injection power density. As a result, we have reduced the low-temperature electric injection power density of the lasers by 40%, compared to that of GaInAs-AlAsSb QC lasers emitting at the same wavelength but adopting a triple-quantum-well design. The lasers in the present report can operate up to room temperature (300 K) in pulsed mode, emitting at short-wavelength lambda~3.7-3.9 mum

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser modes; optical pulse generation; quantum cascade lasers; 300 K; GaInAs-AlAsSb; GaInAs-AlAsSb quantum cascade lasers; bound-to-continuum design; electric injection power density; pulsed mode; triple-quantum-well design; Atmospheric waves; Electrons; Laser modes; Optical design; Optical device fabrication; Optical pulse generation; Optical pulses; Power lasers; Quantum cascade lasers; Temperature; Bound-to-continuum (BTC); GaInAs–AlAsSb; quantum cascade (QC); room temperature; short wavelength;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.877337

Filename

1638508