Title :
Josephson fluxonic bipolar junction transistor
Author_Institution :
Electr. Eng. Dept., K. N. Toosi Univ. of Technol., Tehran, Iran
fDate :
3/1/2004 12:00:00 AM
Abstract :
Josephson fluxonic bipolar junction transistor (JFBJT) has been proposed as a superconducting amplifying element. The results on a simple realization of this device are provided to demonstrate its working principle. These experiments demonstrate that JFBJT provides current gain without suffering from the problems associated with the regular long junction vortex flow transistors. In particular, no resonance structure is present in its I-V characteristics and its impedance can be matched to any load without degradation of its characteristics. Suggestion is made on how a practical device can be fabricated.
Keywords :
Josephson effect; bipolar transistors; superconducting transistors; I-V characteristics; JFBJT; Josephson fluxonic bipolar junction transistor; impedance; long junction vortex flow transistors; superconducting amplifying element; Charge carrier processes; Circuits; Electrodes; Impedance; Josephson junctions; Magnetic fields; P-n junctions; Resonance; Semiconductor diodes; Voltage;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2004.824337