DocumentCode
960499
Title
Josephson fluxonic bipolar junction transistor
Author
Raissi, Farshid
Author_Institution
Electr. Eng. Dept., K. N. Toosi Univ. of Technol., Tehran, Iran
Volume
14
Issue
1
fYear
2004
fDate
3/1/2004 12:00:00 AM
Firstpage
87
Lastpage
93
Abstract
Josephson fluxonic bipolar junction transistor (JFBJT) has been proposed as a superconducting amplifying element. The results on a simple realization of this device are provided to demonstrate its working principle. These experiments demonstrate that JFBJT provides current gain without suffering from the problems associated with the regular long junction vortex flow transistors. In particular, no resonance structure is present in its I-V characteristics and its impedance can be matched to any load without degradation of its characteristics. Suggestion is made on how a practical device can be fabricated.
Keywords
Josephson effect; bipolar transistors; superconducting transistors; I-V characteristics; JFBJT; Josephson fluxonic bipolar junction transistor; impedance; long junction vortex flow transistors; superconducting amplifying element; Charge carrier processes; Circuits; Electrodes; Impedance; Josephson junctions; Magnetic fields; P-n junctions; Resonance; Semiconductor diodes; Voltage;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/TASC.2004.824337
Filename
1288218
Link To Document