• DocumentCode
    960499
  • Title

    Josephson fluxonic bipolar junction transistor

  • Author

    Raissi, Farshid

  • Author_Institution
    Electr. Eng. Dept., K. N. Toosi Univ. of Technol., Tehran, Iran
  • Volume
    14
  • Issue
    1
  • fYear
    2004
  • fDate
    3/1/2004 12:00:00 AM
  • Firstpage
    87
  • Lastpage
    93
  • Abstract
    Josephson fluxonic bipolar junction transistor (JFBJT) has been proposed as a superconducting amplifying element. The results on a simple realization of this device are provided to demonstrate its working principle. These experiments demonstrate that JFBJT provides current gain without suffering from the problems associated with the regular long junction vortex flow transistors. In particular, no resonance structure is present in its I-V characteristics and its impedance can be matched to any load without degradation of its characteristics. Suggestion is made on how a practical device can be fabricated.
  • Keywords
    Josephson effect; bipolar transistors; superconducting transistors; I-V characteristics; JFBJT; Josephson fluxonic bipolar junction transistor; impedance; long junction vortex flow transistors; superconducting amplifying element; Charge carrier processes; Circuits; Electrodes; Impedance; Josephson junctions; Magnetic fields; P-n junctions; Resonance; Semiconductor diodes; Voltage;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/TASC.2004.824337
  • Filename
    1288218