Numerically efficient representation of anisotropic valence bands in semiconductor quantum-well optoelectronic devices

Author

Bream, P.J. ; Sujecki, S. ; Larkins, E.C.

Author_Institution

Sch. of Electr. & Electron. Eng., Univ. of Nottingham

Volume

18

Issue

12

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

1374

Lastpage

1376

Abstract

We present a computationally efficient approach to representing valence band (VB) anisotropies in semiconductor quantum-well optoelectronic devices. The VB dispersion is calculated along the high-symmetry lang100rang and lang110rang axes with the four-band kmiddotp method. The VB isoenergy contours are represented by a first-order Fourier series expansion, which is used to calculate the subband density of states (DOS), the optical DOS and gain. In this way, each photon is allowed to interact with electrons and holes over a finite range of energy states, even without including lifetime broadening effects

Keywords

electronic density of states; k.p calculations; quantum well devices; semiconductor device models; valence bands; DOS; VB isoenergy; anisotropic valence bands; energy states; first-order Fourier series expansion; kmiddotp method; lifetime broadening effects; semiconductor quantum-well optoelectronic devices; subband density of states; Anisotropic magnetoresistance; Charge carrier processes; Electron optics; Fourier series; Function approximation; Geometrical optics; Optical mixing; Optoelectronic devices; Quantum computing; Quantum well devices; Modeling; optoelectronic devices; quantum wells; semiconductor devices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.877343

Filename

1638514