Title :
Numerically efficient representation of anisotropic valence bands in semiconductor quantum-well optoelectronic devices
Author :
Bream, P.J. ; Sujecki, S. ; Larkins, E.C.
Author_Institution :
Sch. of Electr. & Electron. Eng., Univ. of Nottingham
fDate :
6/1/2006 12:00:00 AM
Abstract :
We present a computationally efficient approach to representing valence band (VB) anisotropies in semiconductor quantum-well optoelectronic devices. The VB dispersion is calculated along the high-symmetry lang100rang and lang110rang axes with the four-band kmiddotp method. The VB isoenergy contours are represented by a first-order Fourier series expansion, which is used to calculate the subband density of states (DOS), the optical DOS and gain. In this way, each photon is allowed to interact with electrons and holes over a finite range of energy states, even without including lifetime broadening effects
Keywords :
electronic density of states; k.p calculations; quantum well devices; semiconductor device models; valence bands; DOS; VB isoenergy; anisotropic valence bands; energy states; first-order Fourier series expansion; kmiddotp method; lifetime broadening effects; semiconductor quantum-well optoelectronic devices; subband density of states; Anisotropic magnetoresistance; Charge carrier processes; Electron optics; Fourier series; Function approximation; Geometrical optics; Optical mixing; Optoelectronic devices; Quantum computing; Quantum well devices; Modeling; optoelectronic devices; quantum wells; semiconductor devices;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.877343
