Title :
MBE regrowth of LEDs on VLSI GaAS MESFETs
Author :
Shenoy, Krishna V. ; Fonstad, C.G. ; Psaltis, Demetri
Author_Institution :
MIT, Cambridge, MA
fDate :
11/1/1993 12:00:00 AM
Abstract :
Summary form only given. The regrowth and monolithic integration of heterostructure light-emitting diodes (LEDs) on fully processed VLSI GaAs MESFETs have been demonstrated. Commercially available, self-aligned VLSI GaAs MESFETs with tungsten-based refractory-metal Schottky gates, nickel-based refractory-metal ohmic contacts, and aluminum interconnection metallization have been shown to be stable after 3 h to 525°C±10°C. Thus, it is now possible to regrow optical sources on fully processed MESFET circuitry with lowered-temperature molecular beam epitaxy (MBE). This allows one to build high-density, complex electronic circuitry with optical inputs and optical outputs. Optoelectronic neuron arrays in optical neural networks are considered as an application
Keywords :
III-V semiconductors; Schottky gate field effect transistors; VLSI; gallium arsenide; integrated optoelectronics; light emitting diodes; metallisation; molecular beam epitaxial growth; optical neural nets; semiconductor epitaxial layers; semiconductor growth; 3 h; 515 to 535 degC; MBE; VLSI GaAs MESFETs; fully processed MESFET circuitry; heterostructure light-emitting diodes; interconnection metallization; lowered-temperature molecular beam epitaxy; optical neural networks; optical sources; refractory-metal Schottky gates; refractory-metal ohmic contacts; Circuits; Gallium arsenide; Light emitting diodes; MESFETs; Molecular beam epitaxial growth; Optical arrays; Optical computing; Optical interconnections; Optical refraction; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
