مرکز منطقه ای اطلاع رساني علوم و فناوري - Growth and characteristics of P-doped InAs tunnel injection quantum-dash lasers on InP

DocumentCode :

960522

Title :

Growth and characteristics of P-doped InAs tunnel injection quantum-dash lasers on InP

Author :

Mi, Z. ; Yang, J. ; Bhattacharya, P.

Author_Institution :

Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI

Volume :

Issue :

fYear :

2006

fDate :

6/1/2006 12:00:00 AM

Firstpage :

1377

Lastpage :

1379

Abstract :

We have studied the molecular beam epitaxial growth and characteristics of p-doped InAs tunnel injection quantum-dash lasers on InP (001) substrates. Significantly improved photoluminescence intensity and narrow linewidth (~50 meV) are measured from stacked InAs quantum-dash layers with optimized growth conditions. The lasers exhibit very large T₀ (204 K) and large modulation bandwidth (f_{-3 dB}=12 GHz)

Keywords :

characteristics measurement; indium compounds; molecular beam epitaxial growth; photoluminescence; quantum dot lasers; semiconductor device measurement; semiconductor doping; semiconductor growth; spectral line narrowing; 12 GHz; 204 K; InAs; InP; modulation bandwidth; molecular beam epitaxial growth; narrow linewidth; p-doped InAs tunnel injection; photoluminescence; quantum-dash lasers; Bandwidth; Indium phosphide; Molecular beam epitaxial growth; Photoluminescence; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor lasers; Semiconductor nanostructures; Threshold current; Characteristics temperature; p-doping; quantum-dash lasers; threshold current; tunnel injection;

fLanguage :

English

Journal_Title :

Photonics Technology Letters, IEEE

Publisher :

ieee

ISSN :

1041-1135

Type :

jour

DOI :

10.1109/LPT.2006.877341

Filename :

1638515

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=960522