Title :
110 GHz Si MSM photodetectors
Author :
Liu, M.Y. ; Chou, Stephen Y. ; Alexandrou, S. ; Wang, Cheng C. ; Hsiang, T.Y.
Author_Institution :
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN
fDate :
11/1/1993 12:00:00 AM
Abstract :
Summary form only given. The authors report an Si MSMPD (metal-semiconductor-metal photodetector) with a 3.7-ps response time and 110-GHz bandwidth. They also present an experimental and theoretical study of the factors that are important to the speed of Si MSMPDs, such as the photon absorption length, carrier diffusion length, carrier mean free path, finger spacing, and finger width. They also discuss new possibilities for even faster (~400 GHz) Si-based high-speed MSMPDs
Keywords :
elemental semiconductors; infrared detectors; metal-semiconductor-metal structures; photodetectors; silicon; 110 GHz; 3.7 ps; MSM photodetectors; MSMPD; Si photodetectors; bandwidth; carrier diffusion length; carrier mean free path; finger spacing; finger width; metal-semiconductor-metal photodetector; photon absorption length; response time; semiconductors; Absorption; Bandwidth; Delay; Fingers; Lasers and electrooptics; Photodetectors; Sampling methods; Semiconductor lasers; Transmission line measurements; Wavelength measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
