110 GHz Si MSM photodetectors

Author

Liu, M.Y. ; Chou, Stephen Y. ; Alexandrou, S. ; Wang, Cheng C. ; Hsiang, T.Y.

Author_Institution

Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2145

Lastpage

2146

Abstract

Summary form only given. The authors report an Si MSMPD (metal-semiconductor-metal photodetector) with a 3.7-ps response time and 110-GHz bandwidth. They also present an experimental and theoretical study of the factors that are important to the speed of Si MSMPDs, such as the photon absorption length, carrier diffusion length, carrier mean free path, finger spacing, and finger width. They also discuss new possibilities for even faster (~400 GHz) Si-based high-speed MSMPDs

Keywords

elemental semiconductors; infrared detectors; metal-semiconductor-metal structures; photodetectors; silicon; 110 GHz; 3.7 ps; MSM photodetectors; MSMPD; Si photodetectors; bandwidth; carrier diffusion length; carrier mean free path; finger spacing; finger width; metal-semiconductor-metal photodetector; photon absorption length; response time; semiconductors; Absorption; Bandwidth; Delay; Fingers; Lasers and electrooptics; Photodetectors; Sampling methods; Semiconductor lasers; Transmission line measurements; Wavelength measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239836

Filename

239836