DocumentCode
960680
Title
Simulation of proton-induced local lifetime reduction in 10 kV diodes
Author
Brammer, Ronald ; Hallén, Anders ; Håkansson, Jan
Author_Institution
ABB Drives, Vasteras, Sweden
Volume
40
Issue
11
fYear
1993
fDate
11/1/1993 12:00:00 AM
Firstpage
2089
Lastpage
2091
Abstract
The results of simulation of localized charge carrier lifetime reductions in 10-kV power diodes are presented. These results are compared to experiments with proton irradiation as a means for local lifetime reduction. It is shown that the range straggling inherent in the irradiation process must be taken into account in the simulations
Keywords
carrier lifetime; power electronics; proton effects; semiconductor device models; semiconductor diodes; 10 kV; 1D program; Q-V curves; SEMIACE; localized charge carrier lifetime reductions; power diodes; proton irradiation; proton-induced local lifetime reduction; range straggling; simulation; Bipolar transistors; Diodes; Electron devices; Electron mobility; Impurities; Photonic band gap; Silicon; Solid modeling; Solid state circuits; Steady-state;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.239846
Filename
239846
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