Title :
Enhancement of the reverse-bias second breakdown capability of high-voltage power transistors by using emitter-open turn off
Author :
Chen, Dan Y. ; Jackson, Barry
Author_Institution :
Virginia Polytechnic Institute and State University, Blacksburg, VA
Abstract :
The reverse-bias second breakdown phenomenon of a high voltage power transistor can be eliminated by using emitter-open turn-off method.
Keywords :
Band pass filters; Books; Breakdown voltage; Circuit theory; Electric breakdown; Error correction; Narrowband; Power transistors; Standardization; Switching circuits;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1980.11862
