• DocumentCode
    961128
  • Title

    Amorphous-silicon integrated circuit

  • Author

    Matsumura, Masakiyo ; Hayama, Hiroshi

  • Author_Institution
    Tokyo Institute of Technology, Tokyo, Japan
  • Volume
    68
  • Issue
    10
  • fYear
    1980
  • Firstpage
    1349
  • Lastpage
    1350
  • Abstract
    a-Si thin film FET´s with low-temperature low-pressure chemical vapor deposition (CVD) SiO2as the gate insulator were fabricated and they showed on-off current ratios of about 105. An inverter was made with these a-Si FET´s on a glass substrate for the first time.
  • Keywords
    Amorphous silicon; Breakdown voltage; Chemical vapor deposition; Electric breakdown; Glass; Insulation; Inverters; Power electronics; Substrates; Testing;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1980.11863
  • Filename
    1456132
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=961128