Title :
Extreme Radiation Tolerance of High Temperature Solid-State Microelectronics
Author :
Palmer, David W. ; Draper, Bruce L. ; Carlson, Gary A.
Author_Institution :
Sandia Nat. Lab., NM
fDate :
12/1/1981 12:00:00 AM
Abstract :
The nuclear and space industries require electronics with higher tolerance to radiation than that currently available. The recently developed 300°C electronics technology based on junction field-effect transistor (JFET) thick film hybrids was tested up to 109rad (Si) in a gamma source and 1016neutrons/cm2. Circuits and individual components from this technology all survived this total dose although some devices required 1 h of annealing at 200°C or 300°C to regain functionality. This technology used with real time annealing should function to levels greater than 1010rad(Si) and 1016neutrons/cm2.
Keywords :
Hybrid integrated circuit thermal factors; Hybrid integrated-circuit radiation effects; JFET integrated circuits; Aerospace industry; Annealing; Electronic equipment testing; Electronics industry; Microelectronics; Neutrons; Nuclear electronics; Solid state circuits; Space technology; Temperature;
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
DOI :
10.1109/TCHMT.1981.1135835
