DocumentCode
961339
Title
Graphical method for estimating phonon- and impurity-scattering contributions in heavily doped semiconductors
Author
Rowe, D.M.
Author_Institution
University of Wales Institute of Science & Technology, Department of Applied Physics, Cardiff, UK
Volume
7
Issue
11
fYear
1971
Firstpage
315
Lastpage
317
Abstract
A graphical method is presented for determining the reduced Fermi energy and the relative strength of lattice scattering to impurity scattering in heavily doped semiconductors from measurements of their Hall mobility and thermoelectric power.
Keywords
Hall effect; electron mobility; semiconductors; thermoelectricity; Hall mobility; graphical method; impurity scattering contributions; phonon estimation; scattering processes; semiconductor doping; thermoelectricity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19710217
Filename
4244627
Link To Document