Title :
Graphical method for estimating phonon- and impurity-scattering contributions in heavily doped semiconductors
Author_Institution :
University of Wales Institute of Science & Technology, Department of Applied Physics, Cardiff, UK
Abstract :
A graphical method is presented for determining the reduced Fermi energy and the relative strength of lattice scattering to impurity scattering in heavily doped semiconductors from measurements of their Hall mobility and thermoelectric power.
Keywords :
Hall effect; electron mobility; semiconductors; thermoelectricity; Hall mobility; graphical method; impurity scattering contributions; phonon estimation; scattering processes; semiconductor doping; thermoelectricity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710217
