Title :
Statistical Leakage Estimation of Double Gate FinFET Devices Considering the Width Quantization Property
Author :
Gu, Jie ; Keane, John ; Sapatnekar, Sachin ; Kim, Chris H.
Author_Institution :
Univ. of Minnesota, Minneapolis
Abstract :
This paper presents a statistical leakage estimation method for FinFET devices considering the unique width quantization property. Monte Carlo simulations show that the conventional approach underestimates the average leakage current of FinFET devices by as much as 43% while the proposed approach gives a precise estimation with an error less than 5%. Design example on subthreshold circuits shows the effectiveness of the proposed method.
Keywords :
MOSFET; Monte Carlo methods; estimation theory; leakage currents; Monte Carlo simulations; double gate FinFET devices; statistical leakage estimation; width quantization property; Energy consumption; Estimation error; FinFETs; Integrated circuit modeling; Integrated circuit technology; Leakage current; Nanoscale devices; Power system modeling; Quantization; Very large scale integration; Circuit modeling; integrated circuit (IC) design; leakage currents;
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
DOI :
10.1109/TVLSI.2007.909809
