• DocumentCode
    961506
  • Title

    Carrier-recombination statistics in a 2-level trapping system

  • Author

    Buckingham, M.J. ; Faulkner, E.A.

  • Author_Institution
    University of Reading, J. J. Thomson Laboratory, Reading, UK
  • Volume
    7
  • Issue
    12
  • fYear
    1971
  • Firstpage
    333
  • Lastpage
    335
  • Abstract
    When there is substantial interaction between two trap levels in the band gap, the carrier recombination in the depletion layer of a silicon p¿n junction does not follow conventional Shockley¿Read¿Hall statistics. Such a system is capable of producing a current/voltage relationship approximating to the form I¿ exp (eV/1.5 kT).
  • Keywords
    band structure; semiconductors; statistical analysis; statistics; Si p-n junction; band structure; carrier recombination statistics; crystal electron states; semiconductors; statistics; two level trapping system;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710229
  • Filename
    4244646
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=961506