DocumentCode
961594
Title
Time-domain model of the device/circuit characteristics of a TRAPPAT-plasma mode avalanche-diode oscillator
Author
Culshaw, B.
Author_Institution
Bell-Northern Research, Ottawa, Canada
Volume
7
Issue
12
fYear
1971
Firstpage
339
Lastpage
340
Abstract
A simple computer model of a TRAPATT diode is described. This model is then interfaced with a time-domain representation of a stepped-impedance coaxial circuit, and a bias voltage is applied. Oscillations are then allowed to build up as dictated by the diode-circuit combination, and the performance of a given diode in a particular circuit may be evaluated.
Keywords
avalanche diodes; microwave oscillators; semiconductor device models; time-domain analysis; transit time devices; TRAPATT; avalanche diode oscillators; microwave oscillator; semiconductor device models; time domain model; transit time diodes; trapped plasma mode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19710232
Filename
4244655
Link To Document