• DocumentCode
    961670
  • Title

    Contribution of the surface effects on the white noise of silicon bipolar transistors

  • Author

    Martin, J.C. ; Blasquez, G. ; Caminade, J.

  • Author_Institution
    CRNS, Laboratoire d´Automatique et de ses Applications Spatiales, Toulouse, France
  • Volume
    7
  • Issue
    12
  • fYear
    1971
  • Firstpage
    342
  • Lastpage
    344
  • Abstract
    It is shown that the recombination noise generated in the surface regions of silicon bipolar transistors cannot be predicted by Lauritzen´s theory. Experiments are reported, giving the contribution of the surface recombination noise to the total white noise. The influence of the biasing level on the n¿p¿n and p¿n¿p types is discussed.
  • Keywords
    bipolar transistors; elemental semiconductors; noise; semiconductor materials; silicon; surface phenomena; transistors; white noise; Lauritzen´s theory; Si; biasing level influence; bipolar transistors; n-p-n; p-n-p; surface recombination noise; white noise;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710234
  • Filename
    4244663
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=961670