One-frequency parametric amplifier using self-pumped Josephson junction

Author

Vystavkin, A.N. ; Gubankov, V.N. ; Kuzmin, L.S. ; Likharev, K.K. ; Migulin, V.V. ; Semenov, V.K.

Author_Institution

Institute of Radio Engineering and Electronics Academy of Sciences of the USSR

Volume

13

Issue

1

fYear

1977

fDate

1/1/1977 12:00:00 AM

Firstpage

233

Lastpage

236

Abstract

Gain and noise properties of a non-degenerate one-frequency parametric amplifier using a self-pumped Josephson junction are investigated both theoretically and experimentally. The amplifier uses the phenomenon of microwave negative resistance of the junction. Theoretical analysis made in usual resistively shunted junction (RSJ) model shows that the minimum noise temperature is equal to approximately 42T. It takes place at a signal frequency f close to the junction characteristic frequency f0. Maximum effectivity (the product of the square root of power gain and relative bandwidth) can reach 0.4 at f≃f0. Gain up to 20 dB was obtained at X-band using amplifier with Nb-Ta point-contact junction. Minimum noise temperature at T = 4.2K was about 200K.

Keywords

Josephson device amplifiers; Josephson device noise; Parametric amplifiers; Bandwidth; Circuit noise; Equivalent circuits; Frequency; Josephson junctions; Microwave amplifiers; Noise level; Power amplifiers; Signal processing; Temperature;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.1977.1059419

Filename

1059419