High-speed InP/InGaAs photodiode on sapphire substrate prepared by epitaxial lift-off

Author

Schumacher, Hermann ; Gmitter, T.J. ; Leblanc, Herve P. ; Bhat, Ritesh ; Yablonovitch, Eli ; Koza, M.A.

Author_Institution

Bellcore, Red Bank, NJ, USA

Volume

36

Issue

11

fYear

1989

fDate

11/1/1989 12:00:00 AM

Firstpage

2625

Abstract

Summary form only given. A lift-off technique for epitaxial layers with subsequent deposition on a different substrate was applied to InP/InGaAs devices, demonstrating the ability to combine long-wavelength optoelectronic devices with electronic components from different material systems, e.g. GaAs. Furthermore, it was found that a passivation layer and an interconnecting final metal layer can be applied to the devices after lift-off on the new host substrate. The lift-off process is described in detail.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; photodiodes; semiconductor growth; vapour phase epitaxial growth; Al₂O₃; InP-InGaAs photodiode; OMCVD; electronic components; epitaxial lift-off; interconnecting final metal layer; long-wavelength optoelectronic devices; passivation layer; sapphire substrate; Bandwidth; Dark current; Electronic components; Epitaxial layers; Gallium arsenide; Germanium; Indium gallium arsenide; Indium phosphide; Ionization; Optoelectronic devices; Oscilloscopes; Passivation; Photodiodes; Silicon; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.43751

Filename

43751