High-speed InP/InGaAs photodiode on sapphire substrate prepared by epitaxial lift-off

Summary form only given. A lift-off technique for epitaxial layers with subsequent deposition on a different substrate was applied to InP/InGaAs devices, demonstrating the ability to combine long-wavelength optoelectronic devices with electronic components from different material systems, e.g. GaAs. Furthermore, it was found that a passivation layer and an interconnecting final metal layer can be applied to the devices after lift-off on the new host substrate. The lift-off process is described in detail.