Title :
Electrical characteristics of oxynitride gate dielectrics prepared by rapid thermal processing of LPCVD SiO2 films
Author :
Ting, Wei-Yuan ; Li, P.C. ; Lo, G.Q. ; Kwong, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
5/25/1989 12:00:00 AM
Abstract :
High-quality oxynitride gate dielectrics have been fabricated by rapid thermal processing of LPCVD SiO2 in reactive ambients (NH3 and O2). The as-deposited CVD oxides of 200 AA in thickness show no early breakdowns. The breakdown distribution becomes tighter, the interface state density is reduced, and the interface endurance property is improved after rapid thermal nitridation and reoxidation.
Keywords :
CVD coatings; dielectric thin films; electric breakdown of solids; incoherent light annealing; interface electron states; metal-insulator-semiconductor structures; semiconductor technology; silicon compounds; LPCVD films; MOS technology; NH 3; O 2; SiO 2; SiO xN y; breakdown distribution; interface endurance property; interface state density; oxynitride gate dielectrics; rapid thermal nitridation; rapid thermal processing; reactive ambients; reoxidation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890466
