Title :
High-efficiency hot-electron transport in GaInAs/InP hot electron transistor grown by OMVPE
Author :
Uesaka, Katsumi ; Yamaura, Shingo ; Miyamoto, Yutaka ; Furuya, Keiichi
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
fDate :
5/25/1989 12:00:00 AM
Abstract :
Improved characteristics of the GaInAs/InP hot electron transistor (HET) fabricated by organo-metallic vapour phase epitaxy (OMVPE) are reported. The common-emitter current gain was 8 for the base thickness of 40 nm at 77 K. This result shows a promising potential for the heterostructure material system of GaInAs/InP for high-speed ballistic electron devices.
Keywords :
III-V semiconductors; gallium arsenide; hot carriers; hot electron transistors; indium compounds; semiconductor growth; vapour phase epitaxial growth; GaInAs-InP hot electron transistor; OMVPE; base thickness; common-emitter current gain; high-speed ballistic electron devices; hot-electron transport;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890477
