• DocumentCode
    962186
  • Title

    High-efficiency hot-electron transport in GaInAs/InP hot electron transistor grown by OMVPE

  • Author

    Uesaka, Katsumi ; Yamaura, Shingo ; Miyamoto, Yutaka ; Furuya, Keiichi

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
  • Volume
    25
  • Issue
    11
  • fYear
    1989
  • fDate
    5/25/1989 12:00:00 AM
  • Firstpage
    704
  • Lastpage
    705
  • Abstract
    Improved characteristics of the GaInAs/InP hot electron transistor (HET) fabricated by organo-metallic vapour phase epitaxy (OMVPE) are reported. The common-emitter current gain was 8 for the base thickness of 40 nm at 77 K. This result shows a promising potential for the heterostructure material system of GaInAs/InP for high-speed ballistic electron devices.
  • Keywords
    III-V semiconductors; gallium arsenide; hot carriers; hot electron transistors; indium compounds; semiconductor growth; vapour phase epitaxial growth; GaInAs-InP hot electron transistor; OMVPE; base thickness; common-emitter current gain; high-speed ballistic electron devices; hot-electron transport;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890477
  • Filename
    24089
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=962186