DocumentCode
962200
Title
Backgating studies in In0.53Ga0.47As/In0.52Al0.48 As modulation-doped field-effect transistors
Author
Hong, Won-Pyo ; Bhattacharya, Pallab K.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume
35
Issue
1
fYear
1988
fDate
1/1/1988 12:00:00 AM
Firstpage
8
Lastpage
13
Abstract
A study is presented of the backgating effects in normal and inverted modulation-doped field-effect transistors (MODFETs) grown by molecular-beam epitaxy and their dependence on material properties and device geometry. The experiments were performed on devices with 2-μm gate lengths. The effects of both positive and negative (with respect to the source of the experimental devices) voltages applied to both ohmic and Schottky side contacts were investigated. The inverted MODFET structures, which have a very-high-resistance InAlAs buffer layer, showed negligible backgating characteristics up to side-contact voltages as high as 50 V. The normal structures, on the other hand, were very sensitive to the side-contact voltages with essentially a zero threshold voltage
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device testing; 2 micron; In0.53Ga0.47As-In0.52Al0.48 As; InAlAs buffer layer; MODFETs; Schottky side contacts; backgating effects; device geometry; gate lengths; inverted MODFET structures; molecular-beam epitaxy; ohmic contacts; side-contact voltages; threshold voltage; Buffer layers; Epitaxial layers; FETs; Geometry; HEMTs; Indium compounds; MODFETs; Material properties; Molecular beam epitaxial growth; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.2409
Filename
2409
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