Study of Contact Failures Caused by Organic Contamination on Ag-Si Contacts

Author

Watanabe, Masahiro ; Kishimoto, Munehisa ; Hiratsuka, Yutaka ; Mitani, Shoichi ; Mori, Toshiyuki

Author_Institution

Hitachi, Ltd., Yokohama, Japan

Volume

5

Issue

1

fYear

1982

fDate

3/1/1982 12:00:00 AM

Firstpage

90

Lastpage

94

Abstract

Effects of residual contamination that increases contact resistance with mechanical operation was investigated. Metal sealed switches with Ag-Si internally oxidized contacts were used. Contact surface was contaminated in varying degrees by dipping them into trichloroethylene (CHCICCI2) containing 0-3.0 vol% of paraffin lubricant. Contact were mechanically operated more than 10⁶times. Contact resistance increased gradually with operation, so long as the atmosphere contained oxygen. Contaminant was observed concentrated at the contact point. At the same time a method to evaluate surface organic contamination semiquantitatively was studied by Auger electron spectroscopy (AES).

Keywords

Carbon materials/devices; Component reliability; Contacts; Silicon materials/devices; Silver materials/devices; Contact resistance; Gases; Lubricants; Polymers; Scanning electron microscopy; Spectroscopy; Surface contamination; Surface morphology; Surface resistance; Switches;

fLanguage

English

Journal_Title

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

0148-6411

Type

jour

DOI

10.1109/TCHMT.1982.1135943

Filename

1135943