DocumentCode :
962279
Title :
Low-frequency current oscillations observed with high-resistivity nonohmic GaAs devices
Author :
Kaman, R. ; Grant, Robert ; Jaskolski, S.V.
Author_Institution :
Marquette University, Solid-State Electronics Laboratory, Milwaukee, USA
Volume :
7
Issue :
13
fYear :
1971
Firstpage :
373
Lastpage :
374
Abstract :
Low-frequency small-amplitude current oscillations have been observed with devices constructed of high-resistivity n type bulk GaAs. The oscillations occurred simultaneously with current saturation with low threshold fields (200¿1000 V/cm). The contact junctions made to the oscillating devices appear to be decidedly nonohmic, contrary to what other researchers observing the same type of oscillations have reported for their devices.
Keywords :
oscillations; semiconductor devices; semiconductor materials; 200 to 1000 voltage per centimeter; bulk resistivity; bulk semiconductor materials; characteristics; low frequency current oscillations; n-GaAs; noise; nonohmic devices; trapping effects;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19710255
Filename :
4244723
Link To Document :
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