Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials

Author

Favennec, P.N. ; L´Haridon, H. ; Salvi, M. ; Moutonnet, D. ; Le Guillou, Y.

Author_Institution

CNET/LAB/OCM, Lannion, France

Volume

25

Issue

11

fYear

1989

fDate

5/25/1989 12:00:00 AM

Firstpage

718

Lastpage

719

Abstract

Luminescence of erbium implanted in various semiconductors such as Si, InP, GaAs, AlGaAs, GaInAsP, ZnTe and CdS is presented. The Er³⁺ emission wavelength is the same for all these semiconductors with a bandgap energy greater than the intrashell transition energy of Er 4f electrons (0.805 eV). The Er³⁺ emission intensity depends strongly on both the bandgap energy of the host semiconductor and the material temperature. To obtain an intense room temperature emission, a wide-gap semiconductor must be used.

Keywords

II-VI semiconductors; III-V semiconductors; aluminium compounds; cadmium compounds; elemental semiconductors; erbium; gallium arsenide; gallium compounds; indium compounds; luminescence of inorganic solids; photoluminescence; silicon; zinc compounds; AlGaAs:Er; CdS:Er; Er³⁺ emission intensity; Er³⁺ emission wavelength; GaAs:Er; GaInAsP:Er; InP:Er; Si:Er; ZnTe:Er; bandgap energy; intense room temperature emission; intrashell transition energy; photoluminescence; semiconductors; wide-gap semiconductor;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19890486

Filename

24098